For years, memory manufacturers have been looking for an effective way to offer the advantages of RAM and NAND in a single memory. Advances in memory technology make RAM and SSDs faster and more efficient each year. There are also a number of studies focusing on finding a way to do in-memory computing and essentially aiming at eliminating the need for data back and forth between a device’s processor, memory, and non-volatile RAM. Researchers at Lancaster University in the UK say they have created a new type of non-volatile memory that runs at DRAM speeds, and that this type of DRAM uses only one percent of the energy needed to write data. This new generation memory, called the UK III-V Memory, was built with a 20nm lithographic process. At the time of writing, the prototype was said to be able to erase and program data using a 2.1V power, while typical NAND cells used 3V power for it. The new type of DRAM, developed by British researchers, can allow PCs to be turned on instantly, just like tablets and phones. Manus Hayne, the leader of the study, says that the new memory does not need to reconstruct the data or need to constantly refresh it to ensure data integrity. The DRAM type, UK III-V, can allow devices to store data in the event of a power loss and to reopen the data. Stating that they are in the process of obtaining a patent, Hayne believes that the new technology can be the most important player in the $ 100 billion memory market. Meanwhile, a South Korean-based semiconductor manufacturer, Hynix, plans to produce the world’s fastest DRAM, based on HBM2E technology and capable of transmitting over 460GB of data per second. Similarly, Intel began to offer Optane DC Permanent Memory DIMMs to customers.
